Part Number : | EMB2T2R |
---|---|
Manufacturer/Brand : | LAPIS Semiconductor |
Description : | TRANS 2PNP PREBIAS 0.15W EMT6 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 418936 pcs |
Datasheets | 1.EMB2T2R.pdf2.EMB2T2R.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Supplier Device Package | EMT6 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 47 kOhms |
Power - Max | 150mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 |
Other Names | EMB2T2R-ND EMB2T2RTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 10 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | MB2 |