| Part Number : |
NSBA113EDXV6T1 |
| Manufacturer/Brand : |
AMI Semiconductor / ON Semiconductor |
| Description : |
TRANS 2PNP PREBIAS 0.5W SOT563 |
| RoHs Status : |
Contains lead / RoHS non-compliant |
| Quantity Available |
4238 pcs |
| Datasheets |
NSBA113EDXV6T1.pdf |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
250mV @ 5mA, 10mA |
| Transistor Type |
2 PNP - Pre-Biased (Dual) |
| Supplier Device Package |
SOT-563 |
| Series |
- |
| Resistor - Emitter Base (R2) |
1 kOhms |
| Resistor - Base (R1) |
1 kOhms |
| Power - Max |
500mW |
| Packaging |
Tape & Reel (TR) |
| Package / Case |
SOT-563, SOT-666 |
| Other Names |
NSBA113EDXV6T1OS |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Lead Free Status / RoHS Status |
Contains lead / RoHS non-compliant |
| Frequency - Transition |
- |
| Detailed Description |
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
3 @ 5mA, 10V |
| Current - Collector Cutoff (Max) |
500nA |
| Current - Collector (Ic) (Max) |
100mA |
| Base Part Number |
NSBA1* |
AMI Semiconductor / ON Semiconductor
