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RN1909FE(TE85L,F)

Part Number : RN1909FE(TE85L,F)
Manufacturer/Brand : Toshiba Semiconductor and Storage
Description : TRANS 2NPN PREBIAS 0.1W ES6
RoHs Status : Lead free / RoHS Compliant
Quantity Available 390171 pcs
Datasheets RN1909FE(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 47 kOhms
Power - Max 100mW
Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666
Other Names RN1909FE(TE85LF)CT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Images are for reference only.See Product Specifications for product details.
Buy RN1909FE(TE85L,F) with confidence from icgogogo.com, 1 Year Warranty
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