| Part Number : | RN2910FE,LF(CB |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | TRANS 2PNP PREBIAS 0.1W ES6 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 1459077 pcs |
| Datasheets | RN2910FE,LF(CB.pdf |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Supplier Device Package | ES6 |
| Series | - |
| Resistor - Emitter Base (R2) | - |
| Resistor - Base (R1) | 4.7 kOhms |
| Power - Max | 100mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Other Names | RN2910FE(T5L,F,T) RN2910FE(T5LFT)TR RN2910FE(T5LFT)TR-ND RN2910FE,LF(CT RN2910FELF(CBTR RN2910FELF(CTTR RN2910FELF(CTTR-ND |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 16 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 200MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
Toshiba Semiconductor and Storage
