Part Number : | 1N5619US |
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Manufacturer/Brand : | Microsemi |
Description : | DIODE GEN PURP 600V 1A D5A |
RoHs Status : | Contains lead / RoHS non-compliant |
Quantity Available | 4868 pcs |
Datasheets | 1N5619US.pdf |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |
Voltage - DC Reverse (Vr) (Max) | 600V |
Supplier Device Package | D-5A |
Speed | Fast Recovery = 200mA (Io) |
Series | - |
Reverse Recovery Time (trr) | 250ns |
Packaging | Bulk |
Package / Case | SQ-MELF, A |
Operating Temperature - Junction | -65°C ~ 175°C |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 7 Weeks |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Diode Type | Standard |
Detailed Description | Diode Standard 600V 1A Surface Mount D-5A |
Current - Reverse Leakage @ Vr | 500nA @ 600V |
Current - Average Rectified (Io) | 1A |
Capacitance @ Vr, F | 25pF @ 12V, 1MHz |