| Part Number : | 2N7635-GA |
|---|---|
| Manufacturer/Brand : | GeneSiC Semiconductor |
| Description : | TRANS SJT 650V 4A TO-257 |
| RoHs Status : | Contains lead / RoHS non-compliant |
| Quantity Available | 5482 pcs |
| Datasheets | 2N7635-GA.pdf |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package | TO-257 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A |
| Power Dissipation (Max) | 47W (Tc) |
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Other Names | 1242-1146 |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V |
| FET Type | - |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | 650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257 |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
GeneSiC Semiconductor
