Part Number : | 2SB1457,T6YMEF(M |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | TRANS PNP 2A 100V TO226-3 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4142 pcs |
Datasheets | 2SB1457,T6YMEF(M.pdf |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Transistor Type | PNP |
Supplier Device Package | TO-92MOD |
Series | - |
Power - Max | 900mW |
Packaging | Bulk |
Package / Case | TO-226-3, TO-92-3 Long Body |
Other Names | 2SB1457T6YMEF(M 2SB1457T6YMEFM |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 50MHz |
Detailed Description | Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
Current - Collector (Ic) (Max) | 2A |