Part Number : |
2SK3868(Q,M) |
Manufacturer/Brand : |
Toshiba Semiconductor and Storage |
Description : |
MOSFET N-CH 500V 5A TO220SIS |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
5035 pcs |
Datasheets |
1.2SK3868(Q,M).pdf2.2SK3868(Q,M).pdf |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Vgs (Max) |
±30V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
TO-220SIS |
Series |
- |
Rds On (Max) @ Id, Vgs |
1.7 Ohm @ 2.5A, 10V |
Power Dissipation (Max) |
35W (Tc) |
Packaging |
Bulk |
Package / Case |
TO-220-3 Full Pack |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
FET Type |
N-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Drain to Source Voltage (Vdss) |
500V |
Detailed Description |
N-Channel 500V 5A (Ta) 35W (Tc) Through Hole TO-220SIS |
Current - Continuous Drain (Id) @ 25°C |
5A (Ta) |