| Part Number : |
BSM180D12P2C101 |
| Manufacturer/Brand : |
LAPIS Semiconductor |
| Description : |
MOSFET 2N-CH 1200V 180A MODULE |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
87 pcs |
| Datasheets |
1.BSM180D12P2C101.pdf2.BSM180D12P2C101.pdf3.BSM180D12P2C101.pdf |
| Vgs(th) (Max) @ Id |
4V @ 35.2mA |
| Supplier Device Package |
Module |
| Series |
- |
| Rds On (Max) @ Id, Vgs |
- |
| Power - Max |
1130W |
| Packaging |
Bulk |
| Package / Case |
Module |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Manufacturer Standard Lead Time |
32 Weeks |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
23000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| FET Type |
2 N-Channel (Half Bridge) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Detailed Description |
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module |
| Current - Continuous Drain (Id) @ 25°C |
204A (Tc) |
LAPIS Semiconductor
