Part Number : | BUK9E4R4-80E,127 |
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Manufacturer/Brand : | NXP Semiconductors / Freescale |
Description : | MOSFET N-CH 80V 120A I2PAK |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4596 pcs |
Datasheets | |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK |
Series | TrenchMOS™ |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 25A, 10V |
Power Dissipation (Max) | 349W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | 568-9875-5 934066515127 BUK9E4R480E127 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 17130pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 123nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 80V |
Detailed Description | N-Channel 80V 120A (Tc) 349W (Tc) Through Hole I2PAK |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |