| Part Number : |
DTD143ECT216 |
| Manufacturer/Brand : |
LAPIS Semiconductor |
| Description : |
TRANS PREBIAS NPN 200MW SST3 |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
398622 pcs |
| Datasheets |
DTD143ECT216.pdf |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 2.5mA, 50mA |
| Transistor Type |
NPN - Pre-Biased |
| Supplier Device Package |
SST3 |
| Series |
- |
| Resistor - Emitter Base (R2) |
4.7 kOhms |
| Resistor - Base (R1) |
4.7 kOhms |
| Power - Max |
200mW |
| Packaging |
Tape & Reel (TR) |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Frequency - Transition |
200MHz |
| Detailed Description |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
47 @ 50mA, 5V |
| Current - Collector Cutoff (Max) |
500nA |
| Current - Collector (Ic) (Max) |
500mA |
| Base Part Number |
DTD143 |
LAPIS Semiconductor
