Part Number : |
EMD6FHAT2R |
Manufacturer/Brand : |
LAPIS Semiconductor |
Description : |
PNP+NPN DIGITAL TRANSISTOR (CORR |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
528873 pcs |
Datasheets |
1.EMD6FHAT2R.pdf2.EMD6FHAT2R.pdf |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device Package |
EMT6 |
Series |
Automotive, AEC-Q101 |
Resistor - Emitter Base (R2) |
- |
Resistor - Base (R1) |
4.7 kOhms |
Power - Max |
150mW |
Packaging |
Tape & Reel (TR) |
Package / Case |
SOT-563, SOT-666 |
Other Names |
EMD6FHAT2RTR |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
7 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Frequency - Transition |
250MHz |
Detailed Description |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 1mA, 5V |
Current - Collector Cutoff (Max) |
500nA (ICBO) |
Current - Collector (Ic) (Max) |
100mA |