Part Number : |
EMF17T2R |
Manufacturer/Brand : |
LAPIS Semiconductor |
Description : |
TRANS NPN PREBIAS/PNP 0.15W EMT6 |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
376763 pcs |
Datasheets |
EMF17T2R.pdf |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
Transistor Type |
1 NPN Pre-Biased, 1 PNP |
Supplier Device Package |
EMT6 |
Series |
- |
Resistor - Emitter Base (R2) |
2.2 kOhms |
Resistor - Base (R1) |
2.2 kOhms |
Power - Max |
150mW |
Packaging |
Tape & Reel (TR) |
Package / Case |
SOT-563, SOT-666 |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Frequency - Transition |
250MHz, 140MHz |
Detailed Description |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 20mA, 5V / 180 @ 1mA, 6V |
Current - Collector Cutoff (Max) |
500nA |
Current - Collector (Ic) (Max) |
100mA, 150mA |