| Part Number : |
EMF22T2R |
| Manufacturer/Brand : |
LAPIS Semiconductor |
| Description : |
TRANS NPN PREBIAS/NPN 0.15W EMT6 |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
5662 pcs |
| Datasheets |
EMF22T2R.pdf |
| Voltage - Collector Emitter Breakdown (Max) |
50V, 12V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Transistor Type |
1 NPN Pre-Biased, 1 NPN |
| Supplier Device Package |
EMT6 |
| Series |
- |
| Resistor - Emitter Base (R2) |
10 kOhms |
| Resistor - Base (R1) |
10 kOhms |
| Power - Max |
150mW |
| Packaging |
Tape & Reel (TR) |
| Package / Case |
SOT-563, SOT-666 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Frequency - Transition |
250MHz, 320MHz |
| Detailed Description |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V / 270 @ 10mA, 2V |
| Current - Collector Cutoff (Max) |
500nA |
| Current - Collector (Ic) (Max) |
100mA, 500mA |
LAPIS Semiconductor
