Part Number : |
EPC2100ENGRT |
Manufacturer/Brand : |
EPC |
Description : |
MOSFET 2 N-CH 30V 9.5A/38A DIE |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
6005 pcs |
Datasheets |
EPC2100ENGRT.pdf |
Vgs(th) (Max) @ Id |
2.5V @ 4mA, 2.5V @ 16mA |
Supplier Device Package |
Die |
Series |
eGaN® |
Rds On (Max) @ Id, Vgs |
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
Power - Max |
- |
Packaging |
Tape & Reel (TR) |
Package / Case |
Die |
Other Names |
917-EPC2100ENGRTR |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
16 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
475pF @ 15V, 1960pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 15V, 19nC @ 15V |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
30V |
Detailed Description |
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die |
Current - Continuous Drain (Id) @ 25°C |
10A (Ta), 40A (Ta) |