| Part Number : | FCP650N80Z |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | MOSFET N-CH 800V 10A |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 23379 pcs |
| Datasheets | FCP650N80Z.pdf |
| Vgs(th) (Max) @ Id | 4.5V @ 800µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220 |
| Series | SuperFET® II |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 4A, 10V |
| Power Dissipation (Max) | 162W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 52 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1565pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Detailed Description | N-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220 |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
