Part Number : | FCPF099N65S3 |
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Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 650V 30A TO220F |
RoHs Status : | |
Quantity Available | 14875 pcs |
Datasheets | FCPF099N65S3.pdf |
Vgs(th) (Max) @ Id | 4.5V @ 3mA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220F |
Series | SuperFET® III |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 15A, 10V |
Power Dissipation (Max) | 43W (Tc) |
Package / Case | TO-220-3 Full Pack |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | Not Applicable |
Input Capacitance (Ciss) (Max) @ Vds | 2310pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 30A (Tc) 43W (Tc) Through Hole TO-220F |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |