| Part Number : | FDB86360-F085 |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | MOSFET N-CH 80V 110A TO263 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 8604 pcs |
| Datasheets | FDB86360-F085.pdf |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D²PAK (TO-263AB) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 80A, 10V |
| Power Dissipation (Max) | 333W (Tc) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names | FDB86360-F085CT FDB86360_F085CT FDB86360_F085CT-ND |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 33 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 14600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 253nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Detailed Description | N-Channel 80V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263AB) |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
AMI Semiconductor / ON Semiconductor
