| Part Number : | FDC021N30 |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | PT8 N 30V/20V, MOSFET |
| RoHs Status : | |
| Quantity Available | 284322 pcs |
| Datasheets | FDC021N30.pdf |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SuperSOT™-6 |
| Series | PowerTrench® |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 6.1A, 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Packaging | Original-Reel® |
| Package / Case | SOT-23-6 |
| Other Names | FDC021N30DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 42 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6 |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
AMI Semiconductor / ON Semiconductor
