| Part Number : |
FDD3510H |
| Manufacturer/Brand : |
AMI Semiconductor / ON Semiconductor |
| Description : |
MOSFET N/P-CH 80V 4.3A/2.8A DPAK |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
56497 pcs |
| Datasheets |
FDD3510H.pdf |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Supplier Device Package |
TO-252-4L |
| Series |
PowerTrench® |
| Rds On (Max) @ Id, Vgs |
80 mOhm @ 4.3A, 10V |
| Power - Max |
1.3W |
| Packaging |
Original-Reel® |
| Package / Case |
TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Other Names |
FDD3510HDKR |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Manufacturer Standard Lead Time |
7 Weeks |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| FET Type |
N and P-Channel, Common Drain |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
80V |
| Detailed Description |
Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L |
| Current - Continuous Drain (Id) @ 25°C |
4.3A, 2.8A |
AMI Semiconductor / ON Semiconductor
