| Part Number : | FDMD8900 |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | MOSFET 2N-CH 30V POWER |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 31229 pcs |
| Datasheets | FDMD8900.pdf |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 12-Power3.3x5 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 19A, 10V |
| Power - Max | 2.1W |
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-PowerWDFN |
| Other Names | FDMD8900TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 39 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2605pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5 |
| Current - Continuous Drain (Id) @ 25°C | 19A, 17A |
AMI Semiconductor / ON Semiconductor
