Part Number : | FDT55AN06LA0 |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 60V 12.1A SOT223-4 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 5331 pcs |
Datasheets | 1.FDT55AN06LA0.pdf2.FDT55AN06LA0.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SOT-223-4 |
Series | PowerTrench® |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 11A, 10V |
Power Dissipation (Max) | 8.9W (Tc) |
Packaging | Original-Reel® |
Package / Case | TO-261-4, TO-261AA |
Other Names | FDT55AN06LA0DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4 |
Current - Continuous Drain (Id) @ 25°C | 12.1A (Tc) |