Part Number : | FGA30N65SMD |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | IGBT 650V 60A 300W TO3P-3 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 17001 pcs |
Datasheets | FGA30N65SMD.pdf |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
Test Condition | 400V, 30A, 6 Ohm, 15V |
Td (on/off) @ 25°C | 14ns/102ns |
Switching Energy | 716µJ (on), 208µJ (off) |
Supplier Device Package | TO-3P |
Series | - |
Reverse Recovery Time (trr) | 35ns |
Power - Max | 300W |
Packaging | Tube |
Package / Case | TO-3P-3, SC-65-3 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | Field Stop |
Gate Charge | 87nC |
Detailed Description | IGBT Field Stop 650V 60A 300W Through Hole TO-3P |
Current - Collector Pulsed (Icm) | 90A |
Current - Collector (Ic) (Max) | 60A |