Part Number : | FGA50N100BNTD2 |
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Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | IGBT 1000V 50A 156W TO3P |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 3807 pcs |
Datasheets | FGA50N100BNTD2.pdf |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
Test Condition | 600V, 60A, 10 Ohm, 15V |
Td (on/off) @ 25°C | 34ns/243ns |
Switching Energy | - |
Supplier Device Package | TO-3P |
Series | - |
Reverse Recovery Time (trr) | 75ns |
Power - Max | 156W |
Packaging | Tube |
Package / Case | TO-3P-3, SC-65-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | NPT and Trench |
Gate Charge | 257nC |
Detailed Description | IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P |
Current - Collector Pulsed (Icm) | 200A |
Current - Collector (Ic) (Max) | 50A |