| Part Number : | FJN4302RBU |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | TRANS PREBIAS PNP 300MW TO92-3 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 4852 pcs |
| Datasheets | FJN4302RBU.pdf |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Transistor Type | PNP - Pre-Biased |
| Supplier Device Package | TO-92-3 |
| Series | - |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 300mW |
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 200MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
| Base Part Number | FJN4302 |
