Part Number : | FQA19N20C |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 200V 21.8A TO-3P |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4163 pcs |
Datasheets | FQA19N20C.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-3PN |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 10.9A, 10V |
Power Dissipation (Max) | 180W (Tc) |
Packaging | Tube |
Package / Case | TO-3P-3, SC-65-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 21.8A (Tc) 180W (Tc) Through Hole TO-3PN |
Current - Continuous Drain (Id) @ 25°C | 21.8A (Tc) |