| Part Number : | FQP11P06 |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | MOSFET P-CH 60V 11.4A TO-220 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 59652 pcs |
| Datasheets | 1.FQP11P06.pdf2.FQP11P06.pdf |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220AB |
| Series | QFET® |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
| Power Dissipation (Max) | 53W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 52 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Detailed Description | P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
