Part Number : | FQP4N90 |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 900V 4.2A TO-220 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 5916 pcs |
Datasheets | 1.FQP4N90.pdf2.FQP4N90.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220-3 |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 2.1A, 10V |
Power Dissipation (Max) | 140W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 900V |
Detailed Description | N-Channel 900V 4.2A (Tc) 140W (Tc) Through Hole TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |