Part Number : |
FQPF3N80CYDTU |
Manufacturer/Brand : |
AMI Semiconductor / ON Semiconductor |
Description : |
MOSFET N-CH 800V 3A TO-220F |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
5994 pcs |
Datasheets |
FQPF3N80CYDTU.pdf |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Vgs (Max) |
±30V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
TO-220F-3 (Y-Forming) |
Series |
QFET® |
Rds On (Max) @ Id, Vgs |
4.8 Ohm @ 1.5A, 10V |
Power Dissipation (Max) |
39W (Tc) |
Packaging |
Tube |
Package / Case |
TO-220-3 Full Pack, Formed Leads |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
705pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
FET Type |
N-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Drain to Source Voltage (Vdss) |
800V |
Detailed Description |
N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming) |
Current - Continuous Drain (Id) @ 25°C |
3A (Tc) |