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GA20SICP12-247

Part Number : GA20SICP12-247
Manufacturer/Brand : GeneSiC Semiconductor
Description : TRANS SJT 1200V 45A TO247
RoHs Status : Lead free / RoHS Compliant
Quantity Available 829 pcs
Datasheets GA20SICP12-247.pdf
Vgs(th) (Max) @ Id -
Vgs (Max) -
Technology SiC (Silicon Carbide Junction Transistor)
Supplier Device Package TO-247AB
Series -
Rds On (Max) @ Id, Vgs 50 mOhm @ 20A
Power Dissipation (Max) 282W (Tc)
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3091pF @ 800V
FET Type -
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 1200V
Detailed Description 1200V 45A (Tc) 282W (Tc) Through Hole TO-247AB
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
GA20SICP12-247
GeneSiC Semiconductor GeneSiC Semiconductor Images are for reference only.See Product Specifications for product details.
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