Part Number : | GP1M010A080H |
---|---|
Manufacturer/Brand : | Global Power Technologies Group |
Description : | MOSFET N-CH 800V 9.5A TO220 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 5494 pcs |
Datasheets | GP1M010A080H.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220 |
Series | - |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 4.75A, 10V |
Power Dissipation (Max) | 290W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Other Names | 1560-1177-1 1560-1177-1-ND 1560-1177-5 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2336pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 9.5A (Tc) 290W (Tc) Through Hole TO-220 |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |