| Part Number : | GT10J312(Q) |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | IGBT 600V 10A 60W TO220SM |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 5198 pcs |
| Datasheets | GT10J312(Q).pdf |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Test Condition | 300V, 10A, 100 Ohm, 15V |
| Td (on/off) @ 25°C | 400ns/400ns |
| Switching Energy | - |
| Supplier Device Package | TO-220SM |
| Series | - |
| Reverse Recovery Time (trr) | 200ns |
| Power - Max | 60W |
| Packaging | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Type | Standard |
| IGBT Type | - |
| Detailed Description | IGBT 600V 10A 60W Surface Mount TO-220SM |
| Current - Collector Pulsed (Icm) | 20A |
| Current - Collector (Ic) (Max) | 10A |
| Base Part Number | GT10 |
