Part Number : | HGT1S10N120BNST |
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Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | IGBT 1200V 35A 298W TO263AB |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 17026 pcs |
Datasheets | HGT1S10N120BNST.pdf |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Td (on/off) @ 25°C | 23ns/165ns |
Switching Energy | 320µJ (on), 800µJ (off) |
Supplier Device Package | TO-263AB |
Series | - |
Power - Max | 298W |
Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | HGT1S10N120BNST-ND HGT1S10N120BNSTTR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 44 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | NPT |
Gate Charge | 100nC |
Detailed Description | IGBT NPT 1200V 35A 298W Surface Mount TO-263AB |
Current - Collector Pulsed (Icm) | 80A |
Current - Collector (Ic) (Max) | 35A |
Base Part Number | HGT1S10N120 |