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HGTP3N60A4D

Part Number : HGTP3N60A4D
Manufacturer/Brand : AMI Semiconductor / ON Semiconductor
Description : IGBT 600V 17A 70W TO220AB
RoHs Status : Lead free / RoHS Compliant
Quantity Available 22001 pcs
Datasheets 1.HGTP3N60A4D.pdf2.HGTP3N60A4D.pdf
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Test Condition 390V, 3A, 50 Ohm, 15V
Td (on/off) @ 25°C 6ns/73ns
Switching Energy 37µJ (on), 25µJ (off)
Supplier Device Package TO-220AB
Series -
Reverse Recovery Time (trr) 29ns
Power - Max 70W
Packaging Tube
Package / Case TO-220-3
Other Names HGTP3N60A4D_NL
HGTP3N60A4D_NL-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 21nC
Detailed Description IGBT 600V 17A 70W Through Hole TO-220AB
Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 17A
AMI Semiconductor / ON Semiconductor Images are for reference only.See Product Specifications for product details.
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