| Part Number : | HN3C10FUTE85LF |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | TRANSISTOR NPN US6 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 98084 pcs |
| Datasheets | |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Transistor Type | 2 NPN (Dual) |
| Supplier Device Package | US6 |
| Series | - |
| Power - Max | 200mW |
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Other Names | HN3C10FUTE85LFCT |
| Operating Temperature | - |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gain | 11.5dB |
| Frequency - Transition | 7GHz |
| Detailed Description | RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
Toshiba Semiconductor and Storage
