Part Number : | HTNFET-D |
---|---|
Manufacturer/Brand : | Honeywell Microelectronics & Precision Sensors |
Description : | MOSFET N-CH 55V 8-DIP |
RoHs Status : | Contains lead / RoHS non-compliant |
Quantity Available | 86 pcs |
Datasheets | HTNFET-D.pdf |
Vgs(th) (Max) @ Id | 2.4V @ 100µA |
Vgs (Max) | 10V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-CDIP-EP |
Series | HTMOS™ |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 100mA, 5V |
Power Dissipation (Max) | 50W (Tj) |
Packaging | Tube |
Package / Case | 8-CDIP Exposed Pad |
Other Names | 342-1078 |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 8 Weeks |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 28V |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Drain to Source Voltage (Vdss) | 55V |
Detailed Description | N-Channel 55V 50W (Tj) Through Hole 8-CDIP-EP |
Current - Continuous Drain (Id) @ 25°C | - |