Part Number : | HUF75639G3 |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 100V 56A TO-247 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 22261 pcs |
Datasheets | HUF75639G3.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247 |
Series | UltraFET™ |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 56A, 10V |
Power Dissipation (Max) | 200W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Other Names | HUF75639G3-ND HUF75639G3FS |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-247 |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |