Part Number : | HUFA76629D3ST |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 100V 20A DPAK |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 5640 pcs |
Datasheets | HUFA76629D3ST.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | UltraFET™ |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 20A, 10V |
Power Dissipation (Max) | 110W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1285pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 20A (Tc) 110W (Tc) Surface Mount TO-252AA |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |