Part Number : |
IMD3AT108 |
Manufacturer/Brand : |
LAPIS Semiconductor |
Description : |
TRANS NPN/PNP PREBIAS 0.3W SMT6 |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
444292 pcs |
Datasheets |
1.IMD3AT108.pdf2.IMD3AT108.pdf |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device Package |
SMT6 |
Series |
- |
Resistor - Emitter Base (R2) |
10 kOhms |
Resistor - Base (R1) |
10 kOhms |
Power - Max |
300mW |
Packaging |
Tape & Reel (TR) |
Package / Case |
SC-74, SOT-457 |
Other Names |
IMD3AT108TR |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
10 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Frequency - Transition |
250MHz |
Detailed Description |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V |
Current - Collector Cutoff (Max) |
500nA |
Current - Collector (Ic) (Max) |
100mA |
Base Part Number |
*MD3 |