Part Number : | IRLI610ATU |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 200V 3.3A I2PAK |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 5432 pcs |
Datasheets | IRLI610ATU.pdf |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK (TO-262) |
Series | - |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.65A, 5V |
Power Dissipation (Max) | 3.1W (Ta), 33W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole I2PAK (TO-262) |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |