Part Number : |
MJD112-001 |
Manufacturer/Brand : |
AMI Semiconductor / ON Semiconductor |
Description : |
TRANS NPN DARL 100V 2A IPAK |
RoHs Status : |
Contains lead / RoHS non-compliant |
Quantity Available |
4332 pcs |
Datasheets |
MJD112-001.pdf |
Voltage - Collector Emitter Breakdown (Max) |
100V |
Vce Saturation (Max) @ Ib, Ic |
3V @ 40mA, 4A |
Transistor Type |
NPN - Darlington |
Supplier Device Package |
I-PAK |
Series |
- |
Power - Max |
1.75W |
Packaging |
Tube |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Other Names |
MJD112-001OS |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Contains lead / RoHS non-compliant |
Frequency - Transition |
25MHz |
Detailed Description |
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK |
DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 2A, 3V |
Current - Collector Cutoff (Max) |
20µA |
Current - Collector (Ic) (Max) |
2A |
Base Part Number |
MJD112 |