Part Number : | MJE802G |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | TRANS NPN DARL 80V 4A TO225AA |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 151119 pcs |
Datasheets | MJE802G.pdf |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Transistor Type | NPN - Darlington |
Supplier Device Package | TO-225AA |
Series | - |
Power - Max | 40W |
Packaging | Bulk |
Package / Case | TO-225AA, TO-126-3 |
Other Names | MJE802GOS |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 2 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Current - Collector Cutoff (Max) | 100µA |
Current - Collector (Ic) (Max) | 4A |
Base Part Number | MJE802 |