Part Number : | MT47H512M4THN-3:E TR |
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Manufacturer/Brand : | Micron Technology |
Description : | IC DRAM 2G PARALLEL 63FBGA |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 614 pcs |
Datasheets | MT47H512M4THN-3:E TR.pdf |
Write Cycle Time - Word, Page | 15ns |
Voltage - Supply | 1.7 V ~ 1.9 V |
Technology | SDRAM - DDR2 |
Supplier Device Package | 63-FBGA (9x11.5) |
Series | - |
Packaging | Tape & Reel (TR) |
Package / Case | 63-FBGA |
Other Names | MT47H512M4THN-3:E TR-ND MT47H512M4THN-3:ETR |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Volatile |
Memory Size | 2Gb (512M x 4) |
Memory Interface | Parallel |
Memory Format | DRAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333MHz 450ps 63-FBGA (9x11.5) |
Clock Frequency | 333MHz |
Base Part Number | MT47H512M4 |
Access Time | 450ps |