Part Number : |
MURT10060 |
Manufacturer/Brand : |
GeneSiC Semiconductor |
Description : |
DIODE ARRAY GP 600V 100A 3TOWER |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
650 pcs |
Datasheets |
1.MURT10060.pdf2.MURT10060.pdf |
Voltage - Forward (Vf) (Max) @ If |
1.7V @ 100A |
Voltage - DC Reverse (Vr) (Max) |
600V |
Supplier Device Package |
Three Tower |
Speed |
Fast Recovery = 200mA (Io) |
Series |
- |
Reverse Recovery Time (trr) |
75ns |
Packaging |
Bulk |
Package / Case |
Three Tower |
Other Names |
MURT10060GN |
Operating Temperature - Junction |
-40°C ~ 175°C |
Mounting Type |
Chassis Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
4 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Diode Type |
Standard |
Diode Configuration |
- |
Detailed Description |
Diode Array Standard 600V 100A (DC) Chassis Mount Three Tower |
Current - Reverse Leakage @ Vr |
25µA @ 50V |
Current - Average Rectified (Io) (per Diode) |
100A (DC) |