| Part Number : |
NDD60N900U1-1G |
| Manufacturer/Brand : |
AMI Semiconductor / ON Semiconductor |
| Description : |
MOSFET N-CH 600V 5.9A IPAK-4 |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
4397 pcs |
| Datasheets |
NDD60N900U1-1G.pdf |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Vgs (Max) |
±25V |
| Technology |
MOSFET (Metal Oxide) |
| Supplier Device Package |
I-PAK |
| Series |
- |
| Rds On (Max) @ Id, Vgs |
900 mOhm @ 2.5A, 10V |
| Power Dissipation (Max) |
74W (Tc) |
| Packaging |
Tube |
| Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| FET Type |
N-Channel |
| FET Feature |
- |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Drain to Source Voltage (Vdss) |
600V |
| Detailed Description |
N-Channel 600V 5.7A (Tc) 74W (Tc) Through Hole I-PAK |
| Current - Continuous Drain (Id) @ 25°C |
5.7A (Tc) |
AMI Semiconductor / ON Semiconductor
