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NDS8852H

Part Number : NDS8852H
Manufacturer/Brand : AMI Semiconductor / ON Semiconductor
Description : MOSFET N/P-CH 30V 8SOIC
RoHs Status : Contains lead / RoHS non-compliant
Quantity Available 4893 pcs
Datasheets NDS8852H.pdf
Vgs(th) (Max) @ Id 2.8V @ 250µA
Supplier Device Package 8-SO
Series -
Rds On (Max) @ Id, Vgs 80 mOhm @ 3.4A, 10V
Power - Max 1W
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names NDS8852HTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array N and P-Channel 30V 4.3A, 3.4A 1W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 4.3A, 3.4A
NDS8852H
AMI Semiconductor / ON Semiconductor AMI Semiconductor / ON Semiconductor Images are for reference only.See Product Specifications for product details.
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