Part Number : |
NDS8852H |
Manufacturer/Brand : |
AMI Semiconductor / ON Semiconductor |
Description : |
MOSFET N/P-CH 30V 8SOIC |
RoHs Status : |
Contains lead / RoHS non-compliant |
Quantity Available |
4893 pcs |
Datasheets |
NDS8852H.pdf |
Vgs(th) (Max) @ Id |
2.8V @ 250µA |
Supplier Device Package |
8-SO |
Series |
- |
Rds On (Max) @ Id, Vgs |
80 mOhm @ 3.4A, 10V |
Power - Max |
1W |
Packaging |
Tape & Reel (TR) |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Other Names |
NDS8852HTR |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
FET Type |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
30V |
Detailed Description |
Mosfet Array N and P-Channel 30V 4.3A, 3.4A 1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C |
4.3A, 3.4A |