Part Number : | NTLJD3115PT1G |
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Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET 2P-CH 20V 2.3A 6-WDFN |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 163575 pcs |
Datasheets | NTLJD3115PT1G.pdf |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Supplier Device Package | 6-WDFN (2x2) |
Series | - |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
Power - Max | 710mW |
Packaging | Tape & Reel (TR) |
Package / Case | 6-WDFN Exposed Pad |
Other Names | NTLJD3115PT1G-ND NTLJD3115PT1GOSTR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 41 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 531pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2) |
Current - Continuous Drain (Id) @ 25°C | 2.3A |
Base Part Number | NTLJD3115P |