Part Number : | RFD4N06LSM9A |
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Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | MOSFET N-CH 60V 4A DPAK |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4025 pcs |
Datasheets | RFD4N06LSM9A.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | - |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 1A, 5V |
Power Dissipation (Max) | 30W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 4A (Tc) 30W (Tc) Surface Mount TO-252AA |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |