| Part Number : | RGTH00TS65DGC11 |
|---|---|
| Manufacturer/Brand : | LAPIS Semiconductor |
| Description : | IGBT 650V 85A 277W TO-247N |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 14578 pcs |
| Datasheets | 1.RGTH00TS65DGC11.pdf2.RGTH00TS65DGC11.pdf |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Test Condition | 400V, 50A, 10 Ohm, 15V |
| Td (on/off) @ 25°C | 39ns/143ns |
| Switching Energy | - |
| Supplier Device Package | TO-247N |
| Series | - |
| Reverse Recovery Time (trr) | 54ns |
| Power - Max | 277W |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 15 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Type | Standard |
| IGBT Type | Trench Field Stop |
| Gate Charge | 94nC |
| Detailed Description | IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N |
| Current - Collector Pulsed (Icm) | 200A |
| Current - Collector (Ic) (Max) | 85A |
LAPIS Semiconductor
