Part Number : | RN1104MFV,L3F |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | TRANS PREBIAS NPN 0.15W VESM |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 1081714 pcs |
Datasheets | RN1104MFV,L3F.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | VESM |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 47 kOhms |
Power - Max | 150mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-723 |
Other Names | RN1104MFV (TL3,T) RN1104MFV(TL3,T) RN1104MFV(TL3T)TR RN1104MFV(TL3T)TR-ND RN1104MFV,L3F(B RN1104MFV,L3F(T RN1104MFVL3FTR RN1104MFVTL3T |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |